- 您现在的位置：买卖IC网 > Datasheet目录93 > MRF6S9160HSR5 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 35W NI-780S Datasheet资料下载
参数资料
| 型号： | MRF6S9160HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 535K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 525
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3.6 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
80.2
?
pF
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.2
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 35 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
20
20.9
23
dB
Drain Efficiency
ηD
29
30.5
?
%
Adjacent Channel Power Ratio
ACPR
?
-46.8
-45
dBc
Input Return Loss
IRL
?
-17
-9
dB
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 1200 mA,
Pout
= 76 W Avg., 865 MHz<Frequency<895 MHz
Power Gain
Gps
?
20
?
dB
Drain Efficiency
ηD
?
45
?
%
Error Vector Magnitude
EVM
?
2
?
% rms
Spectral Regrowth at 400 kHz Offset
SR1
?
-66
?
dBc
Spectral Regrowth at 600 kHz Offset
SR2
?
-75
?
dBc
Typical CW Performances
(In Freescale GSM Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 1200 mA, Pout
= 160 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
?
20
?
dB
Drain Efficiency
ηD
?
58
?
%
Input Return Loss
IRL
?
-12
?
dB
Pout
@ 1 dB Compression Point, CW
(f = 940 MHz)
P1dB
?
160
?
W
1. Part is internally matched on input.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V10010NR4 | MOSFET RF N-CHAN PLD-1.5 |
| MRF6V10250HSR5 | MOSFET RF N-CH NI780S |
| MRF6V12500HR5 | FET RF N-CH 1.03GHZ 100V NI-780H |
| MRF6V14300HSR5 | MOSFET RF N-CH 50V NI780S |
| MRF6V2010GNR5 | MOSFET RF N-CH 10W TO-270-2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V10010NR4 | 功能描述:射频MOSFET电源晶体管 VHV6 10W PULSE PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V10010NR4-CUT TAPE | 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET |
| MRF6V10010NT1 | 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel |
| MRF6V10250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V10250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。