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参数资料
| 型号： | MRF6S9160HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 535K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
MRF6S9160HR3 MRF6S9160HSR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Aug. 2008
?
Listed replacement part and Device Migration notification reference number, p. 1
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 6
?
Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Added Product Documentation and Revision History, p. 11
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V10010NR4 | MOSFET RF N-CHAN PLD-1.5 |
| MRF6V10250HSR5 | MOSFET RF N-CH NI780S |
| MRF6V12500HR5 | FET RF N-CH 1.03GHZ 100V NI-780H |
| MRF6V14300HSR5 | MOSFET RF N-CH 50V NI780S |
| MRF6V2010GNR5 | MOSFET RF N-CH 10W TO-270-2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V10010NR4 | 功能描述:射频MOSFET电源晶体管 VHV6 10W PULSE PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V10010NR4-CUT TAPE | 制造商:Freescale 功能描述:MRF6V10010N Series 1090 MHz 10 W 50 V Pulsed Lateral N-Channel RF Power MOSFET |
| MRF6V10010NT1 | 制造商:Freescale Semiconductor 功能描述:VHV6 10W PULSE PLD1.5 - Tape and Reel |
| MRF6V10250HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V10250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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