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参数资料
| 型号： | MRF6S9160HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 535K |
| 描述： | MOSFET RF N-CHAN 28V 35W NI-780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 35W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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C
HIVE INF
O
RMATI
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ARCHIVE INFORMATION
10
RF Device Data
Freescale Semiconductor
MRF6S9160HR3 MRF6S9160HSR3
PACKAGE DIMENSIONS
CASE 465-06
ISSUE G
NI-780
MRF6S9160HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M?1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERS
INCHES
A
1.335 1.345 33.91 34.16
B
0.380 0.390 9.65 9.91
C
0.125 0.170 3.18 4.32
D
0.495 0.505 12.57 12.83
E
0.035 0.045 0.89 1.14
F
0.003 0.006 0.08 0.15
G
1.100 BSC 27.94 BSC
H
0.057 0.067 1.45 1.70
K
0.170 0.210 4.32 5.33
N
0.772 0.788 19.60 20.00
Q
.118 .138 3.00 3.51
R
0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
S
(INSULATOR)
F
S
0.365 0.375 9.27 9.52
M
0.774 0.786 19.66 19.96
aaa
0.005 REF 0.127 REF
bbb
0.010 REF 0.254 REF
ccc
0.015 REF 0.381 REF
Q
2X
bbb BT
A
M
M
M
bbb BT
A
M
M
M
B
B
(FLANGE)
T
SEATINGPLANE
ccc BT
A
M
M
M
bbb BT
A
M
M
M
AA
(FLANGE)
N
(LID)
M
(INSULATOR)
aaa BT
A
M
M
M
R
(LID)
ccc BT
A
M
M
M
CASE 465A-06
ISSUE H
NI-780S
MRF6S9160HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M?1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERS
INCHES
A
0.805 0.815 20.45 20.70
B
0.380 0.390 9.65 9.91
C
0.125 0.170 3.18 4.32
D
0.495 0.505 12.57 12.83
E
0.035 0.045 0.89 1.14
F
0.003 0.006 0.08 0.15
H
0.057 0.067 1.45 1.70
K
0.170 0.210 4.32 5.33
M
0.774 0.786 19.61 20.02
R
0.365 0.375 9.27 9.53
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
1
2
D
2X
K
C
E
H
F
3
4X
U
(FLANGE)
4X
Z
(LID)
bbb
0.010 REF 0.254 REF
ccc
0.015 REF 0.381 REF
aaa
0.005 REF 0.127 REF
S
0.365 0.375 9.27 9.52
N
0.772 0.788 19.61 20.02
U
??? 0.040 ??? 1.02
Z
??? 0.030 ??? 0.76
bbb BT
A
M
M
M
B
B
(FLANGE)
T
SEATINGPLANE
ccc BT
A
M
M
M
bbb BT
A
M
M
M
A
A
(FLANGE)
N
(LID)
M
(INSULATOR)
ccc BT
A
M
M
M
aaa BT
A
M
M
M
R
(LID)
S
(INSULATOR)
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| MRF6V10010NR4 | 功能描述:射频MOSFET电源晶体管 VHV6 10W PULSE PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF6V10250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W AVIONIC NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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