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参数资料
型号： MRF6S9125NBR1
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 功率晶体管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封装： ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4, 4 PIN
文件页数： 1/20页
文件大小： 859K
代理商： MRF6S9125NBR1
MRF6S9125NR1 MRF6S9125NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N-CDMA Application
Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =
950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-960 MHz), IS-95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = -47.1 dBc in 30 kHz Bandwidth
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or
921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.8% rms
GSM Application
Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts
CW Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
398
2.3
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Document Number: MRF6S9125N
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF6S9125NR1
MRF6S9125NBR1
865-960 MHz, 27 W AVG., 28 V
SINGLE N-CDMA, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S9125NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S9125NBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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MRF6S9125NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
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相关代理商/技术参数
参数描述
MRF6S9125NR1 功能描述:MOSFET RF N-CH 28V 27W TO-270-4 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S9125NR1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9125NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9130H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S9130HR3 功能描述:MOSFET RF N-CHAN 28V 27W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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