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参数资料
| 型号： | MRF7S16150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 452K |
| 代理商： | MRF7S16150HR3 |
MRF7S16150HR3 MRF7S16150HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
70
10
1
100
40
50
10
30
20
60
7th Order
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
60
0
IM3U
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
40
IM3L
IM5U
IM5L
IM7L
IM7U
75
15
50
55
60
70
45
65
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
Pout, OUTPUT POWER (WATTS) CW
60
35
30
10
300
20
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ACPR
(dBc)
ηD
40
25
15
Gps
VDD = 28 Vdc, IDQ = 1500 mA
f = 1630 MHz, 802.16d, 64 QAM 3
/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
TwoTone Measurements, 10 MHz Tone Spacing
VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1500 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1630 MHz
400
14
21
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1500 mA
f = 1630 MHz
TC = 30_C
25
_C
30
_C
85
_C
10
1
19
18
17
16
15
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
200
15
21
0
100
16
17
18
IDQ = 1500 mA
f = 1630 MHz
300
VDD = 24 V
28 V
10
45
50
55
1
100
40
35
30
25
20
60
25
_C
85
_C
19
20
32 V
5
TC = 30_C
25
_C
30
_C
85
_C
30
_C
85
_C
25
_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S16150HR5 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S16150HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S16150HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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