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参数资料
| 型号： | MRF7S16150HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 452K |
| 代理商： | MRF7S16150HR3 |
8
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
TYPICAL CHARACTERISTICS
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 32 W Avg., and ηD = 25.4%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
WIMAX TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
10
1
0.1
0.01
0.001
24
6
8
PROBABILITY
(%)
Input Signal
802.16d, 64 QAM 3
/4, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
60
10
(dB)
20
30
40
50
70
80
90
10 MHz
Channel BW
20
515
10
0
5
10
20
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
15
ACPR in 1 MHz
Integrated BW
ACPR in 1 MHz
Integrated BW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S16150HR5 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S16150HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S16150HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 WIMAX 1.6GHZ NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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