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参数资料
| 型号： | MRF7S19080HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 1165K |
| 描述： | MOSFET RF N-CH NI-780 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 750mA |
| 功率 - 输出： | 24W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
18
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2007
?
Initial Release of Data Sheet
1
Dec. 2008
?
Table 4, On Characteristics, corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q),p.2
?
Table 4, On Characteristics, tightened VGS(Q)
max value from 3.8 to 3.5 to match production test value, p. 2
?
Updated PCB information to show more specific material details, Figs. 1 and 17, Test Circuit Schematic,
p. 4, 10
?
Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to latest RoHS compliant
part numbers, p. 4, 10
?
Updated Fig. 14, CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single--Carrier Test
Signal, to better represent
production test signal, p. 8
2
Mar. 2011
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
?
Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device?s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
?
Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 18
相关PDF资料 |
PDF描述 |
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| 3292W-1-501LF | TRIMMER 500 OHM 0.5W TH |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S19080HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF7S19080HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19080HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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