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参数资料
| 型号： | MRF7S19100NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 15/18页 |
| 文件大小： | 592K |
| 描述： | MOSFET RF N-CH 28V 29W TO270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 29W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
TYPICAL CHARACTERISTICS
2040
1880 19801900 20201920
1940
1960
2000
G
ps
, POWER GAIN (dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 29 Watts Avg.
VDD= 28 Vdc, Pout
= 29 W (Avg.), I
DQ
= 1000 mA
Single?Carrier W?CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
1900 20201980
2000
1940
1920
11
19
18
17
16
15
14
13
12
?1.7
33
32
31
30
29
?1.4
?1.5
?1.6
ηD
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
?30
?10
?15
?20
?25
η
D
, DRAIN
EFFICIENCY (%)
1960
G
ps
, POWER GAIN (dB)
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 47 Watts Avg.
VDD= 28 Vdc, Pout
= 47 W (Avg.), I
DQ
= 1000 mA
Single?Carrier W?CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
11
19
18
17
16
15
14
13
12
?3.3
40
39
38
37
36
?3
?3.1
?3.2
ηD
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
?30
?10
?15
?20
?25
η
D
, DRAIN
EFFICIENCY (%)
Figure 5. Two-Tone Power Gain versus
Output Power
10 200100
15
20
1
IDQ
= 1500 mA
1250 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
500 mA
1000 mA
18
17
16
G
ps
, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?10
IDQ
= 500 mA
Pout, OUTPUT POWER (WATTS) PEP
1250 mA
1000 mA
750 mA
1500 mA
10
?20
?30
?40
100
?60
?50
VDD
= 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
PARC
19
750 mA
200
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相关代理商/技术参数 |
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| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19120NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF7S19170HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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