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参数资料
| 型号： | MRF7S19100NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 17/18页 |
| 文件大小： | 592K |
| 描述： | MOSFET RF N-CH 28V 29W TO270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 29W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
8
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
TYPICAL CHARACTERISTICS
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
160
14
19
0 12040 80
16
15
17
18
28 V
IDQ
= 1000 mA
f = 1960 MHz
Figure 12. MTTF Factor versus Junction Temperature
200
VDD
= 32 V
24 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 29 W Avg., and
ηD
= 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
W-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
PROBABILITY (%)
W?CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
Input Signal
?60
?110?9
?10
(dB)
?20
?30
?40
?50
?70
?80
?90
?100
3.84 MHz
Channel BW
7.2
1.8 5.43.6
0
?7.2
?5.4
?3.6
?1.8
9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
?ACPR in 3.84 MHz
Integrated BW
?ACPR in 3.84 MHz
Integrated BW
相关PDF资料 |
PDF描述 |
|---|---|
| MRF7S19120NR1 | MOSFET RF N-CH TO-270-4 |
| MRF7S19170HSR5 | IC MOSFET RF N-CHAN NI-880S |
| MRF7S19210HSR5 | MOSFET RF N-CH 28V 63W NI780S |
| MRF7S21080HSR5 | MOSFET RF N-CH 22W NI-780S |
| MRF7S21110HSR5 | MOSFET RF N-CH 33W NI-780S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19120NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF7S19170HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S19170HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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