参数资料
型号: MRF7S38010HSR3
厂商: Freescale Semiconductor
文件页数: 9/15页
文件大小: 520K
描述: MOSFET RF N-CH 2W 30V NI-400S
标准包装: 250
晶体管类型: LDMOS
频率: 3.4GHz
增益: 15dB
电压 - 测试: 30V
额定电流: 10µA
电流 - 测试: 160mA
功率 - 输出: 2W
电压 - 额定: 65V
封装/外壳: NI-400S-240
供应商设备封装: NI-400S-240
包装: 带卷 (TR)
MRF7S38010HR3 MRF7S38010HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, P
out
= 2
W Avg.,
3/4, 4 Bursts, PAR = 9.5 dB @
f = 3400
MHz and f = 3600
MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM
0.01% Probability on CCDF.
Mask System Type G @ Pout
= 2
W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
?
?
?
?
?
-26
-38
-43
-60
-60
?
?
?
?
?
dBc
Relative Constellation Error @ Pout
= 2 W Avg.
(1)
RCE
?
-33
?
dB
Error Vector Magnitude
(1)
(Typical EVM Performance @ Pout
= 2
W Avg. with OFDM 802.16d
Signal Call)
EVM
?
2.3
?
% rms
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, IDQ
= 160 mA, 3400-3600 MHz Bandwidth
Video Bandwidth @ 12 W PEP Pout
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
20
?
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout
= 2 W Avg.
GF
?
1.04
?
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout
= 10
W CW
Φ
?
2.22
?
°
Average Group Delay @ Pout
= 10
W CW, f = 3500 MHz
Delay
?
1.88
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 10 W CW,
f = 3500 MHz, Six Sigma Window
ΔΦ
?
25.9
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.025
?
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
?
0.246
?
dBm/°C
1. RLE = 20Log(EVM/100)
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