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参数资料
| 型号： | MRF8372 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF LOW POWER TRANSISTOR NPN SILICON |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 101K |
| 代理商： | MRF8372 |
1
MRF8372R1, R2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
16
Vdc
Collector–Base Voltage
36
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TC = 75
°
C (1)
Derate above 75
°
C
1.67
22.2
Watts
mW/
°
C
Storage Temperature Range
TJ, Tstg
TJmax
–55 to +150
°
C
°
C
Maximum Junction Temperature
150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
45
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF8372/D
SEMICONDUCTOR TECHNICAL DATA
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF (SO–8)
(Replaces MRF837/D)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8372G | 制造商:Microsemi Corporation 功能描述:MRF8372G - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF8372GR1 | 制造商:Microsemi Corporation 功能描述:MRF8372GR1 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT 制造商:Microsemi 功能描述:Trans GP BJT NPN 16V 0.2A 8-Pin SO T/R |
| MRF8372GR2 | 制造商:Microsemi Corporation 功能描述:MRF8372GR2 - Bulk |
| MRF8372LF | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MRF8372LFR1 | 功能描述:射频放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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