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参数资料
| 型号： | MRF840 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 64K SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 91K |
| 代理商： | MRF840 |
MRF840
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE
10
—
—
—
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Cob
—
24
35
pF
Common–Base Amplifier Power Gain
(Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz)
Collector Efficiency
(Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz)
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 3.0 W, (3) f = 870 MHz,
VSWR = 20:1, all phase angles)
GPE
6.0
7.0
—
dB
η
50
55
—
%
—
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 10 W output power @ 12.5 Vdc.
Figure 1. 870 MHz Test Circuit
C1, C12 — 50 pF, 100 Mil Chip Capacitor
C2, C11 — 15
μ
F, 20 V Tantalum
C3, C10 — 1000 pF, 350 V UNELCO
C4, C9 — 91 pF Mini–Underwood
C5 — 15 pF
C6 — 15 pF
C7 — 15 pF
C8 — 15 pF
L1, L6 — 11 Turns 20 AWG Around 10
1/2 W Resistor
L2, L5 — Ferrite Bead
L3, L4 — 4 Turn 20 AWG 0.2
″
I.D.
T1, T4 — ZO = 50
T2 — ZO = 30
=
λ
/4 @ 838 MHz
T3 — ZO = 13.5
=
λ
/4 @ 838 MHz
L7 — 18 AWG Wire Loop
L1
L2
L3
L4
L5
L6
C5
C6
C7
C8
C1
C12
C2
C3
C10
C11
C4
C9
L7
RF
OUTPUT
RF
INPUT
0.25
″
0.5
″
SHORTING
PLUG
SOCKET
SOCKET
D.U.T.
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|---|---|
| MRF842 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF846 | 制造商:MOT 功能描述:TRANSISTOR |
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| MRF848 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTOR |
| MRF857 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON RF POWER TRANSISTOR |
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