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参数资料
| 型号： | MRF8P20165WHSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/16页 |
| 文件大小： | 738K |
| 描述： | FET RF LDMOS 28V 550MA NI780S4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.98GHz ~ 2.01GHz |
| 增益： | 14.8dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 550mA |
| 功率 - 输出： | 37W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780HS-4 |
| 供应商设备封装： | NI-780HS-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
5
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
μAdc
On Characteristics
(2)
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 232
μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,IDA
= 550 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=1.5Adc)
VDS(on)
0.05
0.2
0.3
Vdc
Functional Tests
(2,3,4)
(In Freescale Doherty Production Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 550 mA, VGSB
=1.3Vdc,
Pout
= 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
14.2
14.8
17.2
dB
Drain Efficiency
ηD
40.6
44.3
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.2
5.8
—
dB
Adjacent Channel Power Ratio
ACPR
—
--31.0
--28.7
dBc
Typical Broadband Performance
(4)
—
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD
=28Vdc,IDQA
= 550 mA,
VGSB
=1.3Vdc,Pout
= 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
1. Side A and Side B are tied together for this measurement.
2. VDDA
and VDDB
must be tied together and powered by a single DC power supply.
3. Part internally matched both on input and output.
4. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P20165WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR3 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR3 | 功能描述:射频MOSFET电源晶体管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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