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| 型号： | MRF8S9100HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 484K |
| 描述： | MOSFET RF N-CH 100W NI-780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 920MHz |
| 增益： | 19.3dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 72W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF8S9100HR3 MRF8S9100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
?
Typical GSM Performance: VDD
=28Volts,IDQ
= 500 mA, Pout
=
72 Watts CW
Frequency
Gps
(dB)
ηD
(%)
920 MHz
19.3
51.6
940 MHz
19.3
52.9
960 MHz
19.1
54.1
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
?
Typical Pout
@ 1 dB Compression Point
?
108 Watts CW
?
Typical GSM EDGE Performance: VDD
=28Volts,IDQ
= 700 mA, Pout
=
45 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz
19.1
43
--64.1
--74.5
1.8
940 MHz
19.1
44
--63.6
--74.6
2.0
960 MHz
19.0
45
--62.8
--75.1
2.3
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S9100H
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
920--960 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S9100HR3
MRF8S9100HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S9100HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S9100HSR3
?
Freescale Semiconductor, Inc., 2009--2010.
All rights reserved.
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相关代理商/技术参数 |
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| MRF8S9100HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 100W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9102NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 50W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9120NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 120W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9170NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9170NR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
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