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参数资料
| 型号： | MRF8S9120NR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 1530K |
| 描述： | FET RF N-CH 900MHZ QM780-2 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 19.8dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 33W |
| 电压 - 额定： | 70V |
| 封装/外壳： | OM-780-2 |
| 供应商设备封装： | OM-780-2 |
| 包装： | 带卷 (TR) |
MRF8S9120NR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 700 to
1000 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
800 mA, Pout
= 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
20.1
34.6
6.3
--37.2
940 MHz
20.0
34.3
6.3
--37.3
960 MHz
19.8
34.2
6.3
--37.4
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
?
Typical Pout
@ 1 dB Compression Point
?
120 Watts CW
880 MHz
?
Typical Single--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
=
800 mA, Pout
= 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
20.8
35.0
6.2
--37.1
880 MHz
20.8
35.0
6.2
--37.5
895 MHz
20.6
34.8
6.2
--38.0
Features
?
100% PAR Tested for Guaranteed Output Power Capability
?
Characterized with Series Equivalent Large--Signal
Impedance Parameters and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Designed for Digital Predistortion Error Correction Systems
?
Optimized for Doherty Applications
?
225°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S9120N
Rev. 0, 9/2010
Freescale Semiconductor
Technical Data
865--960 MHz, 33 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 2021--03, STYLE 1
O M -- 7 8 0 -- 2
PLASTIC
MRF8S9120NR3
?
Freescale Semiconductor, Inc., 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S9170NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9170NR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF8S9200NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 58W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9200NR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF8S9202GNR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 58W OM780-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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