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参数资料
| 型号： | MRF9002NR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 394K |
| 描述： | MOSFET RF N-CHAN 26V 2W 16-PFP |
| 标准包装： | 1,500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 18dB |
| 电压 - 测试： | 26V |
| 电流 - 测试： | 25mA |
| 功率 - 输出： | 37dBm |
| 电压 - 额定： | 65V |
| 封装/外壳： | 16-SOP（0.276"，7.00mm 宽） |
| 供应商设备封装： | 16-PFP |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
MRF9002NR2
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor Array
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen‐
cies to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment. The device is in a PFP-16 Power Flat Pack package
which gives excellent thermal performances through a solderable backside
contact.
?
Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
Features
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
RoHS Compliant
?
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-
Vdc
Gate-Source Voltage
VGS
-
Vdc
Total Dissipation Per Transistor @ TC
= 25
°C
PD
4
W
Storage Temperature Range
Tstg
-
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case, Single Transistor
RθJC
12
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
MTTF calculator available at http://www.freescale.com/rf
. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF9002NR2
Rev. 8, 5/2006
Freescale Semiconductor
Technical Data
MRF9002NR2
1000 MHz, 2 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 978-03
PLASTIC
PFP-16
Figure 1. Pin Connections
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8
(Top View)
Note: Exposed backside flag is source
9
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
DRAIN 1-1
DRAIN 1-2
DRAIN 2-1
DRAIN 2-2
N.C.
DRAIN 3-1
DRAIN 3-2
N.C.
N.C.
terminal for transistors.
16
1
?
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
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