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| 型号： | MRF9030NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 483K |
| 描述： | IC MOSFET RF N-CHAN TO272-2 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 945MHz |
| 增益： | 20dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 65V |
| 封装/外壳： | TO-270-2 |
| 供应商设备封装： | TO-270-2 |
| 包装： | 带卷 (TR) |
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF9030NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common-source amplifier applications in 26 volt
base station equipment.
?
Typical Performance at 945 MHz, 26 Volts
Output Power ? 30 Watts PEP
Power Gain ? 20 dB
Efficiency ? 41% (Two Tones)
IMD ? -31 dBc
?
Integrated ESD Protection
?
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
?
200C Capable Plastic Package
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
139
0.93
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.08
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF9030N
Rev. 12, 9/2008
Freescale Semiconductor
Technical Data
MRF9030NR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9030NR1 | 功能描述:射频MOSFET电源晶体管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9030R1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9030SR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF904 | 功能描述:TRANS NPN 15V 30MA TO-72 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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