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| 型号： | MRF9120LR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 314K |
| 描述： | IC MOSFET RF N-CHAN NI-860 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 16.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 120W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-860 |
| 供应商设备封装： | NI-860 |
| 包装： | 带卷 (TR) |
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MRF9120LR3
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
?
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ
= 1000 mA
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
atts
ficiency — 26%
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-
Vdc
Gate-Source Voltage
VGS
-
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
-
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Document Number: MRF9120
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
CASE 375B-04, STYLE 1
NI-860
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
?
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9120LR5 | 功能描述:射频MOSFET电源晶体管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9120R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130L | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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