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| 型号： | MRFE6P9220HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 403K |
| 描述： | MOSFET RF N-CH 200W NI-860C3 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 20dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 47W |
| 电压 - 额定： | 66V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
MRFE6P9220HR3
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common-source amplifier
applications in 28 Volt base station equipment.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD
= 28 Volts,
IDQ
= 1600 mA, P
out
= 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 20 dB
Drain Efficiency ? 30%
ACPR @ 750 kHz Offset ? -46 dBc in 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 350 Watts CW Output
Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
?
Typical Pout
@ 1 dB Compression Point
220 Watts CW
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Device Designed for Push-Pull Operation Only
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +66
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 220 W CW
Case Temperature 76°C, 47 W CW
RθJC
0.25
0.28
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6P9220H
Rev. 0, 1/2009
Freescale Semiconductor
Technical Data
MRFE6P9220HR3
865-900 MHz, 47 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
?
Freescale Semiconductor, Inc., 2009. All rights reserved.
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