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| 型号： | MRFE6S9060NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 576K |
| 描述： | MOSFET RF N-CH 14W TO270-2 |
| 产品培训模块： | RF Broadcast Solutions |
| 特色产品： | MRFE6S9060NR1 MOSFET |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 880MHz |
| 增益： | 21.1dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 450mA |
| 功率 - 输出： | 14W |
| 电压 - 额定： | 66V |
| 封装/外壳： | TO-270AA |
| 供应商设备封装： | TO-270-2 |
| 包装： | 标准包装 |
| 其它名称： | MRFE6S9060NR1DKR |
MRFE6S9060NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common-source amplifier
applications in 28 volt base station equipment.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD
= 28 Volts,
IDQ
= 450 mA, P
out
= 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 21.1 dB
Drain Efficiency ? 33%
ACPR @ 750 kHz Offset ? -45.7 dBc in 30 kHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 500 mA,
Pout
= 21 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM ? 1.5% rms
GSM
Application
?
Typical GSM Performance: VDD
= 28 Volts, I
DQ
= 500 mA, P
out
= 60 Watts,
Full Frequency Band (920-960 MHz)
Power Gain ? 20 dB
Drain Efficiency ? 63%
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Integrated ESD Protection
?
225°C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +66
Vdc
Gate-Source Voltage
VGS
- 0.5, +12
Vdc
Maximum Operation Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C,
14 W CW
RθJC
0.77
0.88
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9060N
Rev. 1, 10/2007
Freescale Semiconductor
Technical Data
880 MHz, 14 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRFE6S9060NR1
?
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
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| MRFE6S9060NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9125NBR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9125NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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