参数资料
型号: MRFE6S9060NR1
厂商: Freescale Semiconductor
文件页数: 15/15页
文件大小: 576K
描述: MOSFET RF N-CH 14W TO270-2
产品培训模块: RF Broadcast Solutions
特色产品: MRFE6S9060NR1 MOSFET
标准包装: 1
晶体管类型: LDMOS
频率: 880MHz
增益: 21.1dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 450mA
功率 - 输出: 14W
电压 - 额定: 66V
封装/外壳: TO-270AA
供应商设备封装: TO-270-2
包装: 标准包装
其它名称: MRFE6S9060NR1DKR
MRFE6S9060NR1
9
RF Device Data
Freescale Semiconductor
N-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
IS?95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
...........................................................................................
.......
.........................................................
...................................................
................................
...................................
+ACPR in 30 kHz
................................................
.....................
Integrated BW
...............................................................
..........................................................................
.....
...
.....
.
+ALT1 in 30 kHz
..............
............................
Integrated BW
...............
?80
..
..................................................................
..........................................................
?90
......................... .......................................................... ..............................
........
......................................
..
..................................................................................
..
..
..
.
..
...
.
..
..?ALT1 in 30 kHz
Integrated BW
......................................
.
...............
...................
.............. ................................
............
.....................
.........
....
..
............................
..................
.
....
..
.
.
.........
.
.........
?60
?110
?10
(dB)
?20
?30
?40
?50
?70
?100
1.2288 MHz
Channel BW
2.9
0.7 2.21.5
0
?1.5
?0.7
?3.6
?2.9
?2.2
3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
?ACPR in 30 kHz
Integrated BW
相关PDF资料
PDF描述
MRFE6S9125NR1 MOSFET RF N-CH 27W TO-270-4
MRFE6S9130HSR5 MOSFET RF N-CH 27W NI-780S
MRFE6S9135HSR5 MOSFET RF N-CH 39W 28V NI-880S
MRFE6S9160HSR5 MOSFET RF N-CH 35W 28V NI-780S
MRFE6S9200HSR5 MOSFET RF N-CH 58W 28V NI-880S
相关代理商/技术参数
参数描述
MRFE6S9060NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9060 Series 880 MHz 14 W 28 V N-Channel RF Power MOSFET
MRFE6S9125NBR1 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9125NR1 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs