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| 型号： | MRF9045LR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 591K |
| 描述： | IC MOSFET RF N-CHAN NI-360 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 945MHz |
| 增益： | 18.8dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 350mA |
| 功率 - 输出： | 55W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-360 |
| 供应商设备封装： | NI-360 |
| 包装： | 带卷 (TR) |
MRF9045LR1 MRF9045LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large--signal, common--source amplifier
applications in 28 volt base station equipment.
?
Typical Two--Tone Performance at 945 MHz, 28 Volts
Output Power ? 45 Watts PEP
Power Gain ? 18.8 dB
Efficiency ? 42%
IMD ? --32 dBc
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Features
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C MRF9045LR1
Derate above 25°C
MRF9045LSR1
PD
125
0.71
175
1
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case MRF9045LR1
MRF9045LSR1
RθJC
1.4
1.0
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF9045
Rev. 11, 9/2008
Freescale Semiconductor
Technical Data
MRF9045LR1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B--05, STYLE 1
NI--360
MRF9045LR1
CASE 360C--05, STYLE 1
NI--360S
MRF9045LSR1
?
Freescale Semiconductor, Inc., 2008.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9045LR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9045LR5 | 功能描述:射频MOSFET电源晶体管 45W 945MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045LSR1 | 功能描述:射频MOSFET电源晶体管 45W 945MHZ LDMOS NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045LSR5 | 功能描述:射频MOSFET电源晶体管 45W RF PWR LDMOS NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9045M | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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