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参数资料
| 型号： | MRF9002NR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/10页 |
| 文件大小： | 394K |
| 描述： | MOSFET RF N-CHAN 26V 2W 16-PFP |
| 标准包装： | 1,500 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 18dB |
| 电压 - 测试： | 26V |
| 电流 - 测试： | 25mA |
| 功率 - 输出： | 37dBm |
| 电压 - 额定： | 65V |
| 封装/外壳： | 16-SOP（0.276"，7.00mm 宽） |
| 供应商设备封装： | 16-PFP |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
MRF9002NR2
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
15
35
0
17
31 19Gps
33 19.25P
out
21 17.75VDS
= 26 Vdc
19 17.5IDQ
= 25 mA
f = 960 MHz
17 17.25
Single-Tone
G
ps
, POWER GAIN (dB)
29 18.75
27 18.5
25 18.25
23 18
19.5
2 4 6 8 10 12 14
985
25
41
925
10 dBm
VDS
= 26 Vdc
IDQ
= 25 mA
Single-Tone
P
out
, OUTPUT POWER (dBm)
39
37
35
33
31
29
27
975
965
955
945
935
15 dBm
Pin
= 20 dBm
Pin, INPUT POWER (dBm)
Figure 4. Output Power and Power Gain
versus Input Power
P
out
, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 5. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
30
19.9
20.3
22
-32
-28
Gps
IMD
20 -31
Pout
= 2 W (PEP)
IDQ
= 25 mA
f1 = 960.0 MHz, f2 = 960.1 MHz
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 6. Power Gain and Intermodulation Distortion
versus Supply Voltage
G
ps
, POWER GAIN (dB)
20.2 -29
20.1 -30
29
28
27
26
25
24
23
INTERMODULATION DISTORTION (dBc)
IMD,
40
-65
-20
5
25 mA
VDS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
50 mA
75 mA
100 mA
-25
-30
-35
-40
-45
-50
-55
-60
35
30
25
20
15
10
40
-70
0
10
3rd Order
VDS
= 26 Vdc
f1 = 960.0 MHz, f2 = 960.1 MHz
Pout, OUTPUT POWER (dBm)
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
-10
-20
-30
-40
-50
-60
35
30
25
20
15
5th Order
7th Order
f, FREQUENCY (MHz)
Figure 9. Output Power versus Frequency
40
15
23
10
100 mA
VDS
= 26 Vdc
f = 960 MHz
Single-Tone
22
21
20
19
18
17
16
15 20 25 30 35
25 mA
75 mA
50 mA
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