参数资料
型号: MRF9060NR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封装: ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN
文件页数: 8/12页
文件大小: 449K
代理商: MRF9060NR1
N
O
T
RE
CO
MMENDED
F
O
R
NEW
DE
S
IG
N
NOT
RECOMMENDED
FOR
NEW
DESIGN
MRF9060NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
960
11
19
36
50
IRL
η
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
TwoTone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
G
ps
,POWER
GAIN
(dB)
10
18
14
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
IRL,
INPUT
RETURN
LOSS
(dB)
12
16
18
45
17
40
16
35
15
28
14
30
13
32
12
34
955
950
945
940
935
930
,DRAINη
EFFICIENCY
(%)
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
100
8
20
0.1
0
60
η
VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
18
50
16
40
14
30
12
20
10
110
Gps
100
19
IDQ = 625 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
275 mA
500 mA
18.5
18
17.5
17
16.5
10
1
100
55
15
IDQ = 275 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
500 mA
625 mA
20
30
40
50
110
45
35
25
100
80
10
7th Order
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
5th Order
3rd Order
20
30
40
50
60
70
110
IMD
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