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参数资料
| 型号： | MRF9060NR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1265-09, 2 PIN |
| 文件页数： | 9/12页 |
| 文件大小： | 449K |
| 代理商： | MRF9060NR1 |
N
O
T
RE
CO
MMENDED
F
O
R
NEW
DE
S
IG
N
NOT
RECOMMENDED
FOR
NEW
DESIGN
6
RF Device Data
Freescale Semiconductor
MRF9060NR1
TYPICAL CHARACTERISTICS
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
100
8
20
60
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
18
40
16
20
14
0
12
20
10
40
110
η
IMD
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
Gps
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
108
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
Figure 9. MTTF Factor versus Junction Temperature
109
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9060NR1_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9060R1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF9060S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF9060SR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF9080 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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