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参数资料
| 型号： | MRFE6S9125NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, WB-4, CASE-1484-04, 4 PIN |
| 文件页数： | 12/18页 |
| 文件大小： | 594K |
| 代理商： | MRFE6S9125NBR1 |
MRFE6S9125NR1 MRFE6S9125NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA,
Pout = 60 W Avg., 920-960 MHz, EDGE Modulation
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
40
—
%
Error Vector Magnitude
EVM
—
1.8
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 920-960 MHz
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
62
—
%
Input Return Loss
IRL
—
-12
—
dB
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
P1dB
—
125
—
W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 125 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
10
—
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 27 W Avg.
GF
—
0.93
—
dB
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.011
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.205
—
dBm/°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9125NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9130HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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