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参数资料
| 型号： | MRFE6S9125NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, WB-4, CASE-1484-04, 4 PIN |
| 文件页数： | 17/18页 |
| 文件大小： | 594K |
| 代理商： | MRFE6S9125NBR1 |
8
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY
(%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
14
0
Pout, OUTPUT POWER (WATTS) CW
80
22
60
21
50
30
20
1
10
100
18
Gps
G
ps
,POWER
GAIN
(dB)
10
ηD
300
85
_C
20
19
40
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
,POWER
GAIN
(dB)
VDD = 24 V
280
16
21
0
200
17
40
19
18
20
IDQ = 950 mA
f = 880 MHz
28 V
32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
17
70
25
_C
15
16
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
TC = 30_C
25
_C
85
_C
30
_C
80
120
160
240
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PDF描述 |
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| MRFE6S9125NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
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| MRFE6S9130HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9135HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9125NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 125W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRFE6S9130HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9130HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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