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参数资料
| 型号： | MRFE6S9160HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 10/13页 |
| 文件大小： | 497K |
| 代理商： | MRFE6S9160HR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9160HR3 MRFE6S9160HSR3
TYPICAL CHARACTERISTICS
0
5
10
15
20
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 35 Watts Avg.
960
940
920
900
880
860
65
33
27
40
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
VDD = 28 Vdc, Pout = 35 W (Avg.)
IDQ = 1200 mA, NCDMA IS95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
60
45
30
21
20
18
16
15
13
14
17
19
ALT1
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 70 Watts Avg.
960
940
920
900
880
860
840
70
50
40
30
50
60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
40
35
45
20
18
16
14
12
13
15
17
19
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
22
1
IDQ = 1800 mA
1500 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
17
10
400
G
ps
,POWER
GAIN
(dB)
600 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 100 kHz Tone Spacing
900 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
20
1
IDQ = 600 mA
Pout, OUTPUT POWER (WATTS) PEP
100
30
40
50
70
10
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
10
900 mA
1800 mA
400
1500 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 1 kHz Tone Spacing
20
18
1200 mA
60
1200 mA
840
VDD = 28 Vdc, Pout = 70 W (Avg.)
IDQ = 1200 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
0
5
10
15
20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9160HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9160HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9160HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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