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参数资料
| 型号： | MRFE6S9160HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 11/13页 |
| 文件大小： | 497K |
| 代理商： | MRFE6S9160HR3 |
MRFE6S9160HR3 MRFE6S9160HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
80
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
20
30
40
50
1
400
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
60
70
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
TWOTONE SPACING (MHz)
IM3U
20
30
40
50
1
100
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
VDD = 28 Vdc, Pout = 140 W (PEP)
IDQ = 1200 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
37
60
P6dB = 53.13 dBm (205.59 W)
Pin, INPUT POWER (dBm)
58
56
52
48
32
30
36
34
Actual
Ideal
50
54
28
P
out
,OUTPUT
POWER
(dBm)
P3dB = 52.86 dBm (193.2 W)
P1dB = 52.1 dBm (162.2 W)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
AL
T1,
CHANNEL
POWER
(dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
0
100
Pout, OUTPUT POWER (WATTS) AVG.
80
20
40
50
30
60
20
70
80
1
10
100
10
VDD = 28 Vdc, IDQ = 1200 mA
f = 880 MHz, NCDMA IS95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
50
90
ηD
ACPR
200
ALT1
TC = 30_C
85
_C
25
_C
30
_C
25
_C
85
_C
30
_C
25
_C
85
_C
IM3L
IM5U
IM5L
IM7L
29
31
33
35
60
70
40
30
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 1 kHz Tone Spacing
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 12
μsec(on), 1% Duty Cycle
f = 880 MHz
70
10
IM7U
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9160HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9160HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9160HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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