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型号： MRFE6S9200HR3
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 功率晶体管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
文件页数： 5/11页
文件大小： 393K
代理商： MRFE6S9200HR3
MRFE6S9200HR3 MRFE6S9200HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Z19
0.074″ x 0.669″ x 0.707″ Taper
Z20
0.074″ x 0.524″ x 0.595″ Taper
Z21
0.058″ x 0.474″ x 0.488″ Taper
Z22
0.326″ x 0.491″ Microstrip
Z23
0.708″ x 0.220″ Microstrip
Z24
0.555″ x 0.080″ Microstrip
Z25
0.356″ x 0.080″ Microstrip
PCB
Arlon CuClad 250GX-0300-55-22,
0.030″, εr = 2.55
Z1
0.351″ x 0.080″ Microstrip
Z2
0.538″ x 0.080″ Microstrip
Z3
0.424″ x 0.080″ Microstrip
Z4
0.052″ x 0.220″ Microstrip
Z5
0.414″ x 0.220″ Microstrip
Z6
0.052″ x 0.491″ Microstrip
Z7
0.140″ x 0.491″ Microstrip
Z8
0.244″ x 0.736″ x 0.980″ Taper
Z9
0.119″ x 0.118″ Microstrip
Z10
0.305″ x 0.980″ Microstrip
Z11, Z12
2.134″ x 0.070″ Microstrip
Z13, Z14
1.885″ x 0.100″ Microstrip
Z15
0.100″ x 1.090″ Microstrip
Z16
0.212″ x 1.090″ Microstrip
Z17
0.083″ x 0.962″ x 1.036″ Taper
Z18
0.074″ x 0.816″ x 0.888″ Taper
Z1
RF
INPUT
C1
C20
Z2
Z3
Z4
Z5
Z6
DUT
Z8
Z15
C8
C9
C10
C21
C6
RF
OUTPUT
Z7
Z16
Z17
Z18
Z19
Z20
Z25
C2
B1
VBIAS
C4
C22 C23 C32 C28 C34
VSUPPLY
+
C7
Z9
Z10
R3
R2
Z11
C26
C30
R1
Z12
C3
B2
R4
C27
C31
C13
C15
C11
C12
C14
C17
C16
C19
C18
Z21 Z22 Z23
Z24
Z13
+
C5
C25 C24 C33 C29
+
Z14
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Small Ferrite Beads, Surface Mount
2743019447
Fair Rite
C1, C2, C3, C4, C5, C6
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C7
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C8, C9, C18, C19
1.3 pF Chip Capacitors
ATC100B1R3JT500XT
ATC
C10, C11
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C12, C13
4.3 pF Chip Capacitors
ATC100B4R3JT500XT
ATC
C14, C15, C16, C17
3.3 pF Chip Capacitors
ATC100B3R3JT500XT
ATC
C20
0.6-4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C21
0.8-8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C22, C23, C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C26, C27
10 μF, 35 V Tantalum Chip Capacitors
T491C106K035AT
Kemet
C28, C29
22 μF, 35 V Tantalum Chip Capacitors
T491C226K035AT
Kemet
C30, C31, C32, C33
0.1 μF Chip Capacitors
CDR33Bx104AKYS
Kemet
C34
330 μF, 63 V Electrolytic Capacitor
EKMG630ELL331MJ205
United Chemi-Con
R1, R2, R3, R4
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
相关PDF资料
PDF描述
MRFE6S9201HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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相关代理商/技术参数
参数描述
MRFE6S9200HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HSR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HSR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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