- 您现在的位置：买卖IC网 > PDF目录98043 > MRFE6S9200HR3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRFE6S9200HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 393K |
| 代理商： | MRFE6S9200HR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
60
7th Order
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements
5th Order
3rd Order
600
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
70
IM3U
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
30
IM3L
IM5U
IM5L
IM7L
IM7U
10
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
60
Actual
Ideal
0
2
4
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
THE
CCDF
(dB)
50
70
80
120
30
60
55
50
45
40
35
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
1 dB = 59.7 W
100
90
110
2 dB = 82.5 W
3 dB = 115 W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
49
70
30
38
40
39
40
50
60
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
41
42
43
44
45
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with
Memory Correction
VDD = 28 Vdc, IDQ = 1400 mA, f = 880 MHz
SingleCarrier WCDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
46
47
600
16
24
0
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
TC = 30_C
25
_C
85
_C
10
0.1
23
22
21
20
19
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
30
_C
25
_C
85
_C
18
17
1
60
70
60
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
48
相关PDF资料 |
PDF描述 |
|---|---|
| MRFE6S9201HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9201HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9205HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9205HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HSR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9200HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9200HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。