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参数资料
| 型号： | MRFE6VP61K25HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 11/13页 |
| 文件大小： | 928K |
| 代理商： | MRFE6VP61K25HR6 |
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
7
RF Device Data
Freescale Semiconductor
Zo =5
Zload
Zsource
f = 230 MHz
VDD =50 Vdc,IDQ = 100 mA, Pout = 1250 W Peak
f
MHz
Zsource
Zload
230
1.29 + j3.54
2.12 + j2.68
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 11. Series Equivalent Source and Load Impedance
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
+
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP61K25HR6_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs |
| MRFE6VP61K25HR6_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP61K25HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP61K25HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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