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参数资料
| 型号： | MRFE6VP61K25HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 7/13页 |
| 文件大小： | 928K |
| 代理商： | MRFE6VP61K25HR6 |
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
3
RF Device Data
Freescale Semiconductor
Figure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic — Pulsed
Z23, Z24
1.251″ x 0.300″ Microstrip
Z25, Z26
0.127″ x 0.300″ Microstrip
Z27, Z28
0.116″ x 0.300″ Microstrip
Z29
0.186″ x 0.082″ Microstrip
Z30
0.179″ x 0.082″ Microstrip
* Line length includes microstrip bends
Z1
0.192″ x 0.082″ Microstrip
Z2
0.175″ x 0.082″ Microstrip
Z3, Z4
0.170″ x 0.100″ Microstrip
Z5, Z6
0.116″ x 0.285″ Microstrip
Z7, Z8
0.116″ x 0.285″ Microstrip
Z9, Z10
0.108″ x 0.285″ Microstrip
RF
INPUT Z1
DUT
Z16
Z18
Z17
C16
C4
Z23
Z25
COAX1
COAX2
Z27
C10
+
L1
C17
C18
C19
Z28
Z26
C15
Z24
C1
Z11
C12
C11
C13
Z15
Z21
Z22
C14
VBIAS
VSUPPLY
C22
C23
+
C21
C24
+
L4
Z2
Z3
Z4
C2
C3
Z5
Z6
Z7
Z8
C5
Z9
Z10
L2
R1
Z12
R2
C6
+
C8
C7
C9
VBIAS
Z13
Z14
Z20
Z19
L3
+
VSUPPLY
C26
C27
+
C25
C28
+
C20
RF
OUTPUT
Z29
COAX3
COAX4
Z30
Z11*, Z12*
0.872″ x 0.058″ Microstrip
Z13, Z14
0.412″ x 0.726″ Microstrip
Z15, Z16
0.371″ x 0.507″ Microstrip
Z17*, Z18*
0.466″ x 0.363″ Microstrip
Z19*, Z20*
1.187″ x 0.154″ Microstrip
Z21, Z22
0.104″ x 0.507″ Microstrip
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PDF描述 |
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| MRFE6VP61K25HSR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRFE6VP6300HSR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP61K25HR6_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs |
| MRFE6VP61K25HR6_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP61K25HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP61K25HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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