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参数资料
| 型号： | MRFE6VP61K25HR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 6/13页 |
| 文件大小： | 928K |
| 代理商： | MRFE6VP61K25HR6 |
2
RF Device Data
Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID = 100 mA)
V(BR)DSS
125
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
20
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 1776 μAdc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.4
2.2
2.9
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
—
0.15
—
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
2.8
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
185
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
562
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz,
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23.0
24.0
26.0
dB
Drain Efficiency
ηD
72.5
74.0
—
%
Input Return Loss
IRL
—
--14
--10
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak
(250 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Load Mismatch
(VSWR 65:1 at all Phase Angles)
Ψ
No Degradation in Output Power
1. Each side of device measured separately.
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相关代理商/技术参数 |
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|---|---|
| MRFE6VP61K25HR6_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs |
| MRFE6VP61K25HR6_12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP61K25HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP61K25HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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