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参数资料
| 型号： | MRFE6VP6300HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/15页 |
| 文件大小： | 991K |
| 描述： | FET RF N-CH 300W NI780-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 230MHz |
| 增益： | 26.5dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 300W |
| 电压 - 额定： | 125V |
| 封装/外壳： | NI-780-4 |
| 供应商设备封装： | NI-780-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=50mA)
V(BR)DSS
130
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
5
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 480
μAdc)
VGS(th)
1.7
2.2
2.7
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.5
3.0
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.8
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
76
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
188
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 100 mA, Pout
= 300 W Peak (60 W Avg.), f = 230 MHz,
Pulsed, 100
μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
25.0
26.5
28.0
dB
Drain Efficiency
ηD
72.0
74.0
?
%
Input Return Loss
IRL
?
-- 1 6
-- 9
dB
Load Mismatch
(In Freescale Application Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 100 mA
VSWR 65:1 at all Phase Angles
Pulsed: Pout
= 300 W Peak (60 W Avg.), f = 230 MHz, Pulsed,
100
μsec Pulse Width, 20% Duty Cycle
CW: Pout
= 300 W Avg., f = 130 MHz
Ψ
No Degradation in Output Power
1. Each side of device measured separately.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP6300HR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP6300HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs |
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