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参数资料
| 型号： | MRFG35005MT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | PLASTIC, CASE 466-03, PLD-1.5, 4 PIN |
| 文件页数： | 4/12页 |
| 文件大小： | 127K |
| 代理商： | MRFG35005MT1 |
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RF Device Data
Freescale Semiconductor
MRFG35005MT1
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Document Number: MRFG35005MT1
Rev. 3, 1/2006
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| MRFG35010AR5 | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010R1 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35010 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35030R5 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| MRFG35030R5 | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35005MT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NR5 | 功能描述:TRANSISTOR RF FET 3.5GHZ PLD-1.5 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35005NT1 | 功能描述:MOSFET RF 3.5GHZ 4.5W 12V 1.5PLD RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010 | 功能描述:TRANSISTOR RF FET 3.5GHZ NI360HF RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010ANR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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