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参数资料
| 型号： | MRFG35010 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | NI-360HF, CASE 360D-02, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 402K |
| 代理商： | MRFG35010 |
1
MRFG35010
MOTOROLA RF DEVICE DATA
The RF GaAs Line
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
10 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
28.3
0.19
Watts
W/
°C
Gate–Source Voltage
VGS
–5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
– 65 to +175
°C
Channel Temperature(1)
Tch
175
°C
Operating Case Temperature Range
TC
– 20 to +90
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Class A
Class AB
RθJC
5.3
4.8
°C/W
(1) For reliable operation, the operating channel temperature should not exceed 150
°C.
Order this document
by MRFG35010/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
MRFG35010
CASE 360D–02, STYLE 1
NI–360HF
Motorola, Inc. 2003
REV 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35010ANR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010ANT1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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