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参数资料
| 型号： | MRFG35010 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | NI-360HF, CASE 360D-02, 2 PIN |
| 文件页数： | 4/12页 |
| 文件大小： | 402K |
| 代理商： | MRFG35010 |
MRFG35010
12
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 360D–02
ISSUE B
G
E
N (LID)
C
SEATING
PLANE
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.795
.805
20.19
20.45
INCHES
B
.225
.235
5.72
5.97
C
.125
.176
3.18
4.47
D
.034
.044
0.89
1.12
E
.055
.065
1.40
1.65
F
.004
.006
0.10
0.15
G
.562 BSC
14.28 BSC
H
.077
.087
1.96
2.21
K
.085
.115
2.16
2.92
M
.355
.365
9.02
9.27
N
.355
.365
9.96
10.16
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
1
2
3
Q
2 x
M
A
M
bbb
B M
T
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
Q
.125
.135
3.18
3.43
R
.225
.235
5.72
5.97
S
.225
.235
5.72
5.97
aaa
bbb
ccc
.005
0.13
.010
0.25
.015
0.38
M
A
M
bbb
B M
T
S
(INSULATOR)
K
2 x
B
(FLANGE)
D
2 x
M
A
M
bbb
B M
T
B
M
A
M
ccc
B M
T
H
R (LID)
F
M
A
M
ccc
B M
T
T
A
M
M
A
M
aaa
B M
T
(INSULATOR)
NI–360HF
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2003
HOW TO REACH US:
USA/EUROPE/LOCATIONS NOT LISTED:
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
Motorola Literature Distribution
3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan
P.O. Box 5405, Denver, Colorado 80217
81–3–3440–3569
1–800–521–6274 or 480–768–2130
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852–26668334
HOME PAGE: http://motorola.com/semiconductors
MRFG35010/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35010ANR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010ANT1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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