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参数资料
| 型号： | MRFG35010ANT1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET |
| 封装： | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 432K |
| 代理商： | MRFG35010ANT1 |
MRFG35010ANT1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ =
130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth
9 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
15
Vdc
Gate-Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77°C, 1 W CW
RθJC
6.5
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFG35010AN
Rev. 2, 6/2009
Freescale Semiconductor
Technical Data
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
MRFG35010ANT1
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35010AR1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRFG35010MT1 | 功能描述:MOSFET RF 3.5GHZ 9W 12V 1.5-PLD RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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