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参数资料
| 型号： | MRFIC1859 |
| 厂商： | Motorola, Inc. |
| 英文描述： | Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功放) |
| 中文描述： | 双频GSM 3.6V的集成RF功率放大器（手机3.6V的集成式射频功放） |
| 文件页数： | 5/15页 |
| 文件大小： | 180K |
| 代理商： | MRFIC1859 |
MRFIC1859
5
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
Figure 1. Application Schematic
Vbat
Vramp
CE
Band Select
Tx EN
C23
100 nF
R8 10k
R6
10k
R7
10k
C19
100 nF
C16
1.0 nF
MC33170*
MTSF3N02*
S
S
S
G
D
D
D
D
BS
TxEN
BGSM
BDCS
VDB
Gnd
Vbat
CE
VSS
Out
VP
InV
NinV
LDO
C11
3.3 pF
C18
47 pF
T5 1.5 mm
T2
47 mm
T1 6.0 mm
C7 22 pF
C5 47 pF
C6
1.0 pF
C9
47 pF
R2
6.8 k
C10
22 pF
C2
3.9 pF
L
R3 5.6k
R
C15 12 pF
C17
47 pF
In
GSM
In
DCS
T9 11 mm
R5 12 k
L1 15 nH
R4 8.2 k
T10 4.0 mm
L2
2.7 nH
C1
47 pF
C13
12 pF
C12
10 nF
T
T
N.C.
C3
12 pF
C4
4.7 pF
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
24
23
22
21
20
19
18
17
32 31 30 29 28 27 26 25
C8
6.8 pF
MRFIC1859
Out
DCS
Out
GSM
T1, T2, T3, T4
T5, T6
T7, T8, T9, T10
Substrate FR4 Er = 4.5
C2, C3, C4 are high Q capacitors
* Products of On Semiconductor
Zc = 50
Zc = 30
Zc = 80
T
C21
5.6 pF
C20
N.C.
R
1
2
3
4
5
6
7
8
9
10
11
12
13
14
2.5 mm
1.5 mm
C14
47 pF
C22
47 pF
T6
T4
N
Exposed Pad
(Gnd – on bottom
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