参数资料
型号: MS1001
元件分类: 功率晶体管
英文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.500 INCH, PLASTIC, M174, 4 PIN
文件页数: 1/3页
文件大小: 115K
代理商: MS1001
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM
DESCRIPTION:
The MS1001 is a 12.5V Class C silicon NPN transistor
designed primarily for HF communications. Diffused
emitter resistors provide infinite VSWR capability
under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Device Current
20
A
PD
Total Dissipation
270
W
Tj
Junction Temperature
200
C
TSTG
Storage Temperature
-65 to +150
C
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.65
°°C/W
Features
30 MHz
12.5 VOLTS
IMD = -32 dBc
INFINITE VSWR CAPABILITY @ RATED CONDITIONS
P
OUT = 75 WATTS
G
P = 13dB MINIMUM
COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
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