参数资料
型号: MS2202
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: HERMETIC SEALED, M115, 4 PIN
文件页数: 1/5页
文件大小: 186K
代理商: MS2202
MS2202
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2202 is a low power Class C NPN transistor specifically designed for
avionics driver applications. This device is capable of withstanding an
∞:1
load VSWR at any phase angle under full rated conditions. Low RF thermal
resistance and semi-automatic bonding techniques ensure high reliability
and product consistency.
ABSOLUTE MAXIMUM RATING
ABSOLUTE MAXIMUM RATINGSS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
10
W
IC
Device Current
250
mA
VCC
Collector Supply Voltage
37
V
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +200
°°C
TThermal Data
hermal Data
RTH(J-C)
Junction-case Thermal Resistance
10.0
°°C/W
Features
1025 - 1150 MHz
35 VOLTS
INPUT MATCHING
P
OUT = 2.0 WATTS
G
P = 9.0 dB MINIMUM
LOW THERMAL RESISTANCE
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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