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参数资料
| 型号： | MS2210 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.500 INCH, HERMETIC SEALED, M216, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 418K |
| 代理商： | MS2210 |
MS2210
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
940
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
50
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
- 65 to + 200
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
0.16
°°C/W
* Applies only to rated RF operation.
Features
255 MHz BANDWIDTH
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 300W MINIMUM
Gp = 7.0 dB
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
15:1 VSWR CAPABILITY
DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate duty cycle and pulse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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