参数资料
型号: MSC81090
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: 0.230 INCH, HERMETIC SEALED, STUD PACKAGE-4
文件页数: 1/1页
文件大小: 0K
代理商: MSC81090
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
45
V
BVCER
IC = 5.0 mA
RBE = 10
45
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 28 V
0.5
mA
hFE
VCE = 5.0 V
IC = 100 mA
15
120
---
Cob
VCB = 18 V
f = 1.0 MHz
3.2
pF
POUT
η
C
GP
VCE = 18 V
PIN = 0.2 W
f = 1.0 GHz
2.0
50
10
2.2
55
10.4
W
%
dB
NPN SILICON RF POWER TRANSISTOR
MSC81090
DESCRIPTION:
The ASI MSC81090 is Designed for
General Purpose Class A Power
Amplifier Applications from 0.4 - 1.2
GHz.
FEATURES:
P
G = 10 dB min. at 2.0 W/ 1.0 GHz
Hermetically sealed Package
Omnigold Metalization System
Emitter Ballasted
MAXIMUM RATINGS
IC
200 A
VCC
35 V
PDISS
6.25 W @ TC ≤ 75 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θ
JC
20 °C/W
PACKAGE STYLE .230 4L STUD
COMMON EMITTER
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