参数资料
型号: MSC81250M
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 INCH, FM-2
文件页数: 1/1页
文件大小: 0K
代理商: MSC81250M
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
MI N I MU M
i n c hes / m m
. 1 00 / 2. 5 4
.1 1 0 / 2 . 7 9
. 376 / 9. 55
. 395 / 10. 03
B
C
D
E
F
G
A
MA X I M U M
. 396 / 10. 06
. 407 / 10. 34
. 1 30 / 3. 30
i n c hes / m m
. 450 / 11. 43
H
DI M
K
L
I
J
. 640 / 16. 26
. 890 / 22. 61
. 0 04 / 0. 1 0
. 660 / 16. 76
. 910 / 23. 11
.0 0 7 / 0 . 1 8
H
F
C
E
N
D
M
G
4x . 0 62 x 45°
P
L
K
I
J
2X B
. 0 25 x 45°
A
N
M
. 1 18 / 3. 0 0
. 1 31 / 3. 33
. 020 / 0. 51
. 0 30 / 0. 76
. 193 / 4. 90
. 1 25 / 3. 18
. 395 / 10. 03
. 415 / 10. 54
. 0 72 / 1. 83
. 052 / 1. 32
P
. 230 / 5. 84
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
65
V
BVCER
IC = 25 mA
RBE = 10
65
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 50 V
25
mA
hFE
VCE = 5.0 V
IC = 1.0 A
15
120
---
PG
η
C
POUT
VCC = 50 V
PIN = 250 W
f = 1025 - 1150 MHz
6.2
40
250
6.5
38
270
dB
%
W
NPN SILICON RF POWER TRANSISTOR
MSC81250M
DESCRIPTION:
The
ASI MSC81250M is Designed for
DME/TACAN Applications up to 1150
MHz.
FEATURES:
Internal Input/Output Matching Networks
P
G = 6.2 dB at 250 W/1150 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
17.8 A
VCC
55 V
PDISS
600 W @ TC ≤ 80 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θ
JC
0.2 °C/W
PACKAGE STYLE .400 2NL FLG
1
2
3
1 = Collector 2 = Base 3 = Emitter
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