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参数资料
| 型号： | MSD1010T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 47K |
| 代理商： | MSD1010T1 |
MMBT1010LT1 MSD1010T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
15
—
Vdc
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A, IE = 0
5.0
—
Vdc
Collector-Base Cutoff Current
ICBO
VCB = 20 V, IE = 0
—
0.1
A
Collector-Emitter Cutoff Current
ICEO
VCE = 10 V, IB = 0
—
100
A
DC Current Gain
hFE1(2)
VCE = 5 V, IC = 100 mA
300
600
—
Collector-Emitter Saturation Voltage
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
—
0.1
0.19
Vdc
Base-Emitter Saturation Voltage
VBE(sat)(2)
IC = 100 mA, IB = 10 mA
—
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
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