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参数资料
| 型号： | MSD42T1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 125K |
| 代理商： | MSD42T1G |
Semiconductor Components Industries, LLC, 2010
May, 2010 Rev. 7
1
Publication Order Number:
MSD42WT1/D
MSD42WT1G, MSD42T1G
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
and SC59 packages which are designed for low power surface
mount applications.
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
Vdc
Collector-Emitter Voltage
V(BR)CEO
300
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
Collector Current Continuous
IC
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
55X+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
0.1
mA
EmitterBase Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
25
40
Collector-Emitter Saturation Voltage
IB = 2.0 mAdc)
VCE(sat)
0.5
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommendedfootprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAMS
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
3
1
2
SC59
CASE 318D
MSD42T1G
SC59
(PbFree)
3000 / Tape & Reel
MSD42WT1G
3000 / Tape & Reel
SC70
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1D MG
G
1
XXX
= Specific Device Code
M
= Date Code
G
= PbFree Package
J1D MG
G
1
(Note: Microdot may be in either location)
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| MSD42WT1 | 功能描述:两极晶体管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| MSD4410C | 功能描述:LED 显示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 显示器类型:7 Segment 数位数量:2 字符大小:7.8 mm x 14.22 mm 照明颜色:Red 波长:628 nm 共用管脚:Common Anode 工作电压:2.05 V 工作电流:20 mA 最大工作温度:+ 85 C 最小工作温度:- 35 C 封装:Tube |
| MSD4440C | 功能描述:LED 显示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 显示器类型:7 Segment 数位数量:2 字符大小:7.8 mm x 14.22 mm 照明颜色:Red 波长:628 nm 共用管脚:Common Anode 工作电压:2.05 V 工作电流:20 mA 最大工作温度:+ 85 C 最小工作温度:- 35 C 封装:Tube |
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