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参数资料
| 型号： | MSD601-ST1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, CASE 318D-04, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 42K |
| 代理商： | MSD601-ST1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 7
1
Publication Order Number:
MSD601RT1/D
MSD601RT1, MSD601ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
PbFree Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector Base Voltage
V(BR)CBO
60
Vdc
Collector Emitter Voltage
V(BR)CEO
50
Vdc
Emitter Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current Continuous
IC
100
mAdc
Collector Current Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
55 ~ +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC59
CASE 318D
MARKING
DIAGRAM
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
Yx M
G
x
= R for RT1
S for ST1
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MSD602 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:NPN General Purpose Amplifier Transistor Surface Mount |
| MSD602RT1 | 制造商:NA 功能描述: |
| MSD602-RT1 | 功能描述:两极晶体管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD602-RT1G | 功能描述:两极晶体管 - BJT SS GP XSTR NPN 25V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MSD6100 | 功能描述:二极管 - 通用，功率，开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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