参数资料
型号: MSD601-ST1G
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, CASE 318D-04, SC-59, 3 PIN
文件页数: 2/4页
文件大小: 42K
代理商: MSD601-ST1G
MSD601RT1, MSD601ST1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Collector Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
Emitter Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
70
Vdc
Collector Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
0.1
mAdc
Collector Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
100
nAdc
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601RT1
MSD601ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
290
90
340
460
Collector Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.5
Vdc
1. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device
Package
Shipping
MSD601RT1
SC59
3000 Units / Reel
MSD601RT1G
SC59
(PbFree)
3000 Units / Reel
MSD601ST1
SC59
3000 Units / Reel
MSD601ST1G
SC59
(PbFree)
3000 Units / Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相关PDF资料
PDF描述
MSD602-RT3 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MSG110 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
MSG33003 L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
MSG36C42 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
MSG36E31 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MSD602 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:NPN General Purpose Amplifier Transistor Surface Mount
MSD602RT1 制造商:NA 功能描述:
MSD602-RT1 功能描述:两极晶体管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MSD602-RT1G 功能描述:两极晶体管 - BJT SS GP XSTR NPN 25V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MSD6100 功能描述:二极管 - 通用,功率,开关 100V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube