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参数资料
| 型号： | MSD1819A-RT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CASE 419-04, SC-70, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 153K |
| 代理商： | MSD1819A-RT3 |
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 4
1373
Publication Order Number:
MSD1819ART1/D
MSD1819A-RT1
Preferred Device
General Purpose
Amplifier Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
High hFE, 210460
Low VCE(sat), < 0.5 V
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
ESD Protection: Machine Model > 400 V
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current Continuous
IC
100
mAdc
Collector Current Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1.)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
55 ~ + 150
°C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Device
Package
Shipping
ORDERING INFORMATION
MSD1819ART1
SC70
http://onsemi.com
SC70
CASE 419
STYLE 3
3000/Tape & Reel
2
3
1
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
ZR M
ZR = Specific Device Code
M = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
MSD1819ART3
SC70
10,000/Tape & Reel
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| MSD200-08 | 功能描述:DIODE BRIDGE 3PH 800V 200A SM3 RoHS:是 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP? |
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